RF2108 |
RFQ for RF2108 Required Field |
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| Product | Manufacturers | Pack | D/C |
| RF2108 | - | SOP | 07/08+ |
The RF2108 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics.
Typical Application |
Features |
| • 4.8V AMPS Cellular Handsets• 4.8V CDMA/AMPS Cellular Handsets• Driver Amplifier in Cellular Base Stations• Portable Battery Powered Equipment | • Single 4.2V to 6.0V Supply• 28dBm Linear Output Power• 29dB Gain With Analog Gain Control• 45% Linear Efficiency• On-board Power Down Mode• 800MHz to 950MHz Operation |
| Parameter | Rating | Unit |
| Supply Voltage (No RF) | -0.5 to +8.0 | VDC |
| Supply Voltage (POUT<31dBm) | -0.5 to +6.0 | VDC |
| Power Control Voltage (VPC) | -0.5 to +6.0 or VCC | V |
| DC Supply Current | 800 | mA |
| Input RF Power | +12 | dBm |
| Output Load VSWR | 10:1 | |
| Storage Temperature | -40 to +150 | °C |
| Junction Temperature | 200 | °C |
